Resumen
This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.
Informaciones generales
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Estado: PublicadoFecha de publicación: 2018-11Etapa: Cierre de la revisión [90.60]
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Edición: 2Número de páginas: 17
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Comité Técnico :ISO/TC 201/SC 7ICS :71.040.40
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Ciclo de vida
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Anteriormente
RetiradaISO 14701:2011
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Ahora
