Resumen
This document specifies the structure model with related parameters, file format and fitting procedure for characterizing critical dimension (CD) values for wafer and photomask by imaging with a critical dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single isolated or dense line feature pattern down to size of 10 nm.
Preview
Previsualice esta norma en nuestra Plataforma de navegación en línea (OBP)
Informaciones generales
-
Estado: PublicadoFecha de publicación: 2019-12Etapa: Norma Internacional publicada [60.60]
-
Edición: 1Número de páginas: 47
-
Comité Técnico :ISO/TC 202/SC 4ICS :37.020
- RSS actualizaciones
Ciclo de vida
Got a question?
Check out our FAQs
Customer care
+41 22 749 08 88
Opening hours:
Monday to Friday - 09:00-12:00, 14:00-17:00 (UTC+1)